1500 Photovoltaic Inverter IGBT

Which IGBT topology is best for a 1500 VDC inverter?

An optimized intermediate voltage class IGBT blocking capability is commercially not available to support 1500 VDC applications. As a result, a 3-level topology based on 1200 V IGBTs is the preferred topology nowadays for inverters with DC-link voltages of up to 1500 VDC in the field of renewable energy applications.

What is a 2300 V Si IGBT?

The clear focus is set on the MW-range of solar central inverters with VDC=1500 V and results in the new 2300 V Si-IGBT and 2300 V Si-Diode voltage class. To reach the highest performance, the most recent technology with the 7th generation of the TRENCHSTOPTM IGBT and Emitter Controlled Diode is used as the basis for this new power device.

Are insulated-gate bipolar transistors a good choice for solar inverter applications?

For solar inverter applications, it is well known that insulated-gate bipolar transistors (IGBTs) ofer benefits compared to other types of power devices, like high-current-carrying capability, gate control using voltage instead of current and the ability to match the co-pack diode with the IGBT.

How to choose a power module for a central PV inverter?

In central PV inverter applications, 3-level neutral point clamp topologies based on 1200 V IGBTs are a popular approach. However, finding a suitable power module is often challenging considering the requirements of high current ratings, low stray inductance and standardized housing with widespread availability.

What is a 1500V rated inverter?

This 1500V rated inverter uses the NPS three-level inverter shown in Fig. 2b. Switches Q1 and Q4 are rated at 1700V, so that Q1 and Q4 can withstand up to 1500V each. Q2 and Q3 are rated at 1200V. The NPS type offers the advantage of less conduction losses and a simpler configuration than other three-level topologies.

How to achieve low inductive commutation in 3 level central PV inverters?

High power 3-level central PV inverters with low inductive commutation can be realized by using half bridge IGBT modules. It has been shown that by using LV100 IGBT modules in combination with the active neutral clamp (A-NPC) topology, a low inductive commutation path is available for all operating modes.